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December 2010
FDD14AN06LA0_F085
N-Channel PowerTrench ? MOSFET
60V, 50A, 14.6m ?
Features
? r DS(ON) = 12.8m ? (Typ.), V GS = 5V, I D = 50A
? Q g (tot) = 25nC (Typ.), V GS = 5V
? Low Miller Charge
? Low Q RR Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? Qualified to AEC Q101
? RoHS Compliant
Formerly developmental type 83557
DRAIN
(FLANGE)
GATE
SOURCE
TO-252AA
Applications
? Motor / Body Load Control
? ABS Systems
? Powertrain Management
? Injection Systems
? DC-DC converters and Off-line UPS
? Distributed Power Architectures and VRMs
? Primary Switch for 12V and 24V systems
D
G
S
FDD SERIES
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
60
± 20
Units
V
V
Drain Current
Continuous (T C < 100 o C, V GS = 10V)
50
A
C
I D
E AS
P D
T J , T STG
Continuous (T C < 80 o C, V GS = 5V)
Continuous (T amb = 25 o C, V GS = 5V, with R θ JA = 52 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
50
9.5
Figure 4
55
125
0.83
-55 to 175
A
A
A
mJ
W
W/ o C
o
Thermal Characteristics
R θ JC
Maximum Thermal Resistance Junction to Case TO-252
1.2
o C/W
R θ JA
Maximum Thermal Resistance Junction to Ambient TO-252, 1in 2
copper pad area
52
o
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
?2010 Fairchild Semiconductor Corporation
FDD14AN06LA0_F085 Rev. C
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